2SK3305B-S19-AY

2SK3305B-S19-AY

$0.95
  • Description:N-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:dc33ddbfb3a7 Category: Brand:

  
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Product Detailed Parameters

  • Description:N-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK3305B-S19-AY

Overview

The 2SK3305B-S19-AY is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-efficiency switching applications, featuring a TOLL (TO-Leadless) package derivative that optimizes thermal performance and current handling capabilities compared to traditional leaded packages.

Feature Summary

  • N-channel power MOSFET technology
  • TOLL (TO-Leadless) package derivative design
  • Optimized thermal performance characteristics

Applications

  • Automotive power management systems
  • High-efficiency DC-DC converters
  • Motor control circuits

Procurement Notes

Verify the specific suffix S19-AY against official Renesas documentation to confirm exact pinout and packaging specifications. Ensure compatibility with automated placement equipment due to the TOLL package form factor. Cross-reference thermal resistance values in the latest datasheet for your specific PCB layout constraints.

Selection Notes

Select this component when superior thermal dissipation is required in compact automotive or industrial designs. The TOLL package offers lower thermal resistance than standard TO-220 variants. Evaluate on-resistance and gate charge parameters relative to switching frequency requirements for optimal efficiency.

Part Context

This device belongs to Renesas' automotive-grade power MOSFET portfolio. It utilizes advanced silicon processes to achieve low on-state resistance while maintaining robust avalanche energy ratings suitable for harsh electrical environments found in modern vehicle architectures.

Replacement Considerations

Consult Renesas official substitution guides for direct equivalents. Verify pin-to-pin compatibility and thermal pad dimensions if replacing legacy TO-220 components. Ensure voltage and current ratings meet or exceed original design specifications.

2SK3305B-S19-AY2SK3305B-S19-AY
$0.95
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