2SK3318

$4.44

Description：MOSFET N-CH 600V 15A TOP-3F-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:e0b1d170527b Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 15A TOP-3F-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：460mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TOP-3F-A1
Package / Case：TOP-3F

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2SK3318

Overview

The Panasonic 2SK3318 is a silicon N-channel power MOSFET designed for switching applications. It features a TOP-3F-A1 package with a drain-source voltage of 600 V and a continuous drain current of 15 A. The device exhibits a maximum on-resistance of 0.46 Ω at VGS = 10 V and ID = 7.5 A. Key electrical parameters include a gate threshold voltage of 2 to 4 V, forward transfer admittance up to 10 S, and input capacitance of 500 pF. Thermal characteristics specify a channel-case heat resistance of 1.25 °C/W and a total power dissipation of 100 W at 25°C case temperature.

Feature Summary

Guaranteed avalanche energy capability for robust operation under transient conditions
High-speed switching performance with low turn-on and turn-off times
Low ON resistance Ron to minimize conduction losses
No secondary breakdown ensuring stable safe operating area

Applications

Standard electronic equipment such as office machines and communications gear
General-purpose measuring instruments
Household appliances requiring reliable switching components

Procurement Notes

Verify the latest product status via official channels before procurement, as availability may change. Confirm that the specific package variant matches design requirements. Ensure compliance with RoHS directives if applicable to your region. Review the most recent Product Standards for any specification updates prior to finalizing orders or designs.

Selection Notes

Select this component for circuits requiring high-voltage handling up to 600 V and moderate current levels around 15 A. Consider the thermal resistance values when designing heat sinking solutions. Verify that the gate drive voltage meets the threshold requirements for full enhancement. Evaluate the avalanche energy rating against potential inductive load spikes in the target application.

Part Context

This part belongs to the category of silicon N-channel power MOSFETs intended for general switching purposes. It is manufactured by Panasonic Electronic Components. The device utilizes a TOP-3F-A1 surface mount package. It is designed for standard applications rather than specialized high-reliability sectors like aerospace or medical life support systems without prior consultation.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on pinout or generic specifications. Verify electrical ratings and thermal characteristics match or exceed original requirements.