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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3322(1)-ZK-E2-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source breakdown voltage of 600V and a continuous drain current of 5.5A. The device has a maximum on-state resistance of 2.2Ω at VGS=10V and ID=2.8A, with a typical gate charge of 15nC at VDD=450V. It utilizes a TO-263 (MP-25ZK) surface-mount package and supports an operating temperature up to 150°C.
Feature Summary
- Low gate charge for efficient switching performance
- High voltage capability suitable for demanding applications
- Low on-state resistance to minimize conduction losses
Applications
- Switching power supplies
- AC adapters
Procurement Notes
Verify the specific suffix ZK-E2-AZ against the manufacturer's latest datasheet to confirm package type and compliance status. Ensure the ordering information matches the required variant within the 2SK3322 family, as suffixes denote specific packaging or environmental certifications. Cross-reference with authorized distributors to validate authenticity and traceability.
Selection Notes
Select this component for high-voltage applications requiring low gate charge and robust switching characteristics. The TO-263 package facilitates surface-mount assembly. Compare the 2.2Ω RDS(on) and 600V rating against circuit requirements to ensure adequate headroom for voltage spikes and thermal management needs in power conversion designs.
Part Context
This part belongs to the 2SK3322 series of N-channel DMOS FET devices from Renesas Electronics. The series includes variants such as 2SK3322-AZ and 2SK3322-ZJ-E2-AZ, which share similar electrical characteristics but differ in packaging options like TO-220AB and TO-262. The 2SK3322(1)-ZK-E2-AZ specifically denotes the TO-263 configuration.
Replacement Considerations
Compatible substitutes include other 2SK3322 family members such as 2SK3322-ZJ-E2-AZ or 2SK3322-Z-E2-AZ, provided the package footprint and pinout are compatible. Verify that alternative parts meet the same 600V/5.5A specifications and RDS(on) limits.
