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Product Detailed Parameters
- Description：DISCRETE / POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3326(9)AZ is an N-Channel DMOS FET device manufactured by Renesas Electronics Corporation. Designed for industrial use, this single power MOSFET features low gate charge and excellent switching characteristics suitable for high voltage applications. The component is lead-free and packaged in a configuration with three leads.
Feature Summary
- N-Channel DMOS FET structure optimized for industrial applications
- Low gate charge design for efficient operation
- Excellent switching characteristics for high voltage environments
Applications
- Industrial power systems
- High voltage switching circuits
- Consumer electronics power management
Procurement Notes
Verify the manufacturer part number 2SK3326(9)AZ against official Renesas documentation to ensure authenticity. Confirm that the component meets industrial use specifications and lead-free requirements as stated in the datasheet. Check package integrity and lead count before integration into designs.
Selection Notes
Select this component for applications requiring N-Channel DMOS FETs with low gate charge. Ensure the design supports high voltage operations compatible with the device's ratings. Verify compatibility with industrial and consumer use standards specified by the manufacturer.
Part Context
This discrete power MOSFET belongs to the Renesas Electronics Corporation lineup of single FETs. It is specifically engineered for industrial and consumer applications where reliable switching performance at high voltages is required. The device represents a standard solution for power management tasks in electronic systems.
Replacement Considerations
Consult official Renesas documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other N-Channel MOSFETs without verifying electrical parameters and package dimensions against the original specification sheet.
