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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3367-Z-E2-AZ is a single N-channel enhancement mode MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (V(BR)DSS) of 30V and a continuous drain current (ID) of 36A at 25°C. The device utilizes a TO-252 (MP-3Z) surface-mount package with three leads. Key electrical characteristics include a typical input capacitance (Ciss) of 2800pF and a gate-source voltage rating of 20V. The component is RoHS compliant, lead-free, and designed for high-efficiency switching applications.
Feature Summary
- N-channel enhancement mode construction for efficient switching control
- Low on-resistance design optimized for power efficiency
- Surface-mount TO-252 package for automated assembly integration
Applications
- Industrial motor control systems
- Consumer electronics power management
- DC-DC converter circuits
Procurement Notes
Verify the specific suffix -E2-AZ to confirm lead-free status and tape-and-reel packaging configuration. Ensure compatibility with TO-252 footprint requirements during PCB layout. Confirm RoHS compliance documentation matches current regulatory standards for the target market. Validate that the 30V rating meets system voltage headroom requirements.
Selection Notes
Select this component when a 30V N-channel MOSFET with 36A current capability is required in a compact surface-mount form factor. Consider the 2800pF input capacitance for drive circuit design. Evaluate thermal performance within the TO-252 package constraints for the intended power dissipation levels. Ensure gate drive voltage does not exceed the 20V limit.
Part Context
This part belongs to the Renesas 2SK33xx series of single N-channel power MOSFETs. These devices are engineered for general-purpose switching applications requiring low on-state resistance and robust avalanche capabilities. The series supports various industrial and consumer power conversion topologies.
Replacement Considerations
Publicly confirmed substitute part numbers were not identified in the provided source material. Verify pinout and electrical specifications before considering alternative manufacturers.
