2SK33720UL

2SK33720UL

  • Description:JFET N-CH 2MA SSSMINI3-F1
  • Series:-

SKU:84a36e309dfc Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 2MA SSSMINI3-F1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):20 V
  • Current - Drain (Idss) @ Vds (Vgs=0):107 µA @ 2 V
  • Current Drain (Id) - Max:2 mA
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:100 mW
  • Operating Temperature:-20°C ~ 80°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SSSMini3-F1
  • Grade:-
  • Qualification:-

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2SK33720UL

Overview

The Panasonic 2SK33720UL is a silicon N-channel Junction FET designed for low-frequency impedance conversion and electret capacitor microphone applications. It operates within an ambient temperature range of -20°C to +80°C and features a SSSMini3-F1 package with Drain, Source, and Gate pins on terminals 1, 2, and 3 respectively. Key electrical characteristics include a maximum drain-source voltage (VDSO) of 20 V, a power dissipation rating of 100 mW, and a typical mutual conductance (gm) ranging from 660 µS to 1,600 µS at 1 kHz. The device exhibits a noise voltage of 4 µV and a drain-source current (IDSS) between 107 µA and 460 µA.

Feature Summary

  • High mutual conductance suitable for signal amplification
  • Low noise voltage performance for sensitive audio circuits
  • Optimized for impedance conversion in low frequency ranges

Applications

  • Impedance conversion in low frequency circuits
  • Electret capacitor microphone pre-amplifiers

Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm exact packaging and lifecycle status. Confirm RoHS compliance requirements match project specifications. Check for maintenance or discontinuation notices directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when high mutual conductance and low noise are required for small-signal processing. Ensure the design accommodates the specified 20 V drain-source voltage limit and 100 mW power dissipation constraints. Verify that the operating environment remains within the -20°C to +80°C temperature range for guaranteed performance.

Part Context

This part belongs to the Panasonic 2SK3372 series of silicon junction FETs. It is specifically engineered for small-signal applications requiring high gain and low noise characteristics. The device utilizes a compact surface-mount package to facilitate automated assembly in consumer electronics and audio equipment.

Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-compatibility should be validated by comparing pin configurations, absolute maximum ratings, and electrical parameters such as mutual conductance and breakdown voltage.

2SK33720UL2SK33720UL

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