2SK3372GUL

2SK3372GUL

$0.12
  • Description:JFET N-CH 2MA SSSMINI3-F2
  • Series:-

SKU:b22661f9773e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:JFET N-CH 2MA SSSMINI3-F2
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):20 V
  • Current - Drain (Idss) @ Vds (Vgs=0):107 µA @ 2 V
  • Current Drain (Id) - Max:2 mA
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:100 mW
  • Operating Temperature:-20°C ~ 80°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SSSMini3-F2
  • Grade:-
  • Qualification:-

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2SK3372GUL

Overview

The Panasonic 2SK3372GUL is a silicon N-channel junction FET designed for low-frequency impedance conversion and electret capacitor microphone applications. It operates within a drain-source voltage of 20 V and dissipates up to 100 mW. The device features a typical mutual conductance of 660 µS at 1 kHz, with a maximum noise voltage of 4 µV. Electrical characteristics include a drain-source current rating of 2 mA and an operating ambient temperature range from -20°C to +80°C. It is housed in the SSSMini3-F2 surface-mount package.

Feature Summary

  • High mutual conductance suitable for signal amplification
  • Low noise voltage performance for sensitive audio circuits
  • Optimized for low-frequency impedance conversion tasks

Applications

  • Electret capacitor microphone pre-amplifiers
  • Low-frequency impedance conversion stages
  • General-purpose small-signal amplification

Procurement Notes

Verify component authenticity through authorized distribution channels due to discontinued status. Confirm RoHS compliance documentation matches the specific manufacturing batch. Review the latest Panasonic product standards before final procurement to ensure specifications remain unchanged.

Selection Notes

Select this component for applications requiring high input impedance and low noise at low frequencies. Ensure the design accommodates the 20 V drain-source voltage limit and 100 mW power dissipation constraints. Verify that the SSSMini3-F2 package dimensions fit the target PCB layout requirements.

Part Context

This part belongs to the Panasonic Silicon Junction FET series, specifically engineered for small-signal processing. It utilizes standard silicon technology optimized for audio and sensor interface applications where low noise and stable gain are critical parameters.

Replacement Considerations

No official direct substitutes are listed in the datasheet. Evaluate alternative N-channel JFETs based on matching mutual conductance, noise voltage, and package footprint. Verify pinout compatibility and absolute maximum ratings before implementation.

2SK3372GUL2SK3372GUL
$0.12
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