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The Renesas Electronics 2SK3377-Z-E1-AZ is an N-Channel Power MOSFET designed for high current switching applications. It features a maximum drain-to-source voltage of 60 V and a continuous DC drain current of 20 A at 25°C. The device exhibits low on-state resistance, with RDS(on)1 max 44 mΩ at VGS=10V and RDS(on)2 max 78 mΩ at VGS=4.0V. Input capacitance is typically 760 pF. It includes a built-in gate protection diode and body diode. Available in TO-251 or TO-252 packages, the component is currently obsolete.
This part number is officially marked as Obsolete and no longer manufactured by Renesas Electronics. Verification of availability should focus on surplus distributors or secondary markets rather than direct manufacturer supply. Confirm RoHS3 compliance status and package type (TO-251 or TO-252) when sourcing replacements from third-party vendors.
Designers requiring this component must account for its obsolete status. Selection should prioritize verifying the specific package variant (TO-251 vs TO-252) required by the existing footprint. Ensure replacement candidates match the 60 V rating and 20 A current capacity while maintaining similar thermal characteristics and pinout compatibility.
The 2SK3377 series was originally developed by NEC Electronics Corporation before merging into Renesas Electronics in April 2010. This specific part represents the standard N-Channel MOSFET line intended for general-purpose high-current switching tasks within industrial and consumer electronics sectors prior to discontinuation.
Public confirmed substitute part numbers are not available in the provided documentation. Users must identify equivalent components based on matching electrical parameters such as V_DSS, I_D, and R_DS(on).
The absolute maximum rating for Drain to Source Voltage (V_DSS) is 60 V.
Yes, the 2SK3377 features a built-in gate protection diode connected between the gate and source to protect against electrostatic discharge.