2SK3377(0)-Z-E2-AZ

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:9a4780d05b24 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：20A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3377(0)-Z-E2-AZ

Overview

The Renesas Electronics 2SK3377 is an N-channel power MOSFET designed for high-current switching applications. It features a low on-state resistance of 44 mΩ maximum at VGS = 10 V and ID = 10 A, or 78 mΩ maximum at VGS = 4.0 V and ID = 10 A. The device supports a drain current of ±20 A DC and ±50 A pulse. It includes a built-in gate protection diode and is available in TO-251 (MP-3) and TO-252 (MP-3Z) packages.

Feature Summary

Low on-state resistance for efficient power handling
Built-in gate protection diode for ESD safety
Designed specifically for high-current switching applications

Applications

High-current switching circuits
Power management systems
Industrial equipment control

Procurement Notes

Verify the specific package variant required, as the base part number covers both TO-251 and TO-252 configurations. Confirm the latest quality grade classification with a Renesas sales office before finalizing procurement plans. Ensure compliance with applicable export control laws and regulations when sourcing this component internationally.

Selection Notes

Select based on thermal requirements, noting the total power dissipation drops significantly from case to ambient temperature. Evaluate the safe operating area curves to ensure the application stays within limits for single-pulse and continuous operation. Consider the gate charge characteristics for driving circuit design efficiency.

Part Context

This component belongs to the Renesas (formerly NEC Electronics) N-channel MOSFET family. It is engineered for robust performance in demanding electronic environments. The datasheet specifies standard quality grades suitable for general industrial and commercial electronics applications.