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Product Detailed Parameters
- Description：2SK3402-ZK-E1-AY - SWITCHING N-C
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3200 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 40W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (MP-3Z)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SK3402-ZK-E1-AY is a single N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 36A. The device exhibits a low on-resistance (R_DS(on)) of 0.015Ω at a gate-source voltage of 10V with a drain current of 18A. Additional electrical characteristics include a gate charge (Q_g) of 61nC at 10V, a total power dissipation of 1W, and a thermal resistance junction-to-case of 2.5°C/W. The component is housed in a TO-252 surface-mount package.
Feature Summary
- Single N-channel configuration for efficient switching applications
- Low on-resistance to minimize conduction losses
- Surface-mount TO-252 package for compact integration
Applications
- Industrial equipment power management
- Consumer electronics power circuits
Procurement Notes
Verify the specific suffix E1-AY against the manufacturer's current product status, as some sources indicate this variant may be obsolete or non-compliant with certain regulations. Confirm RoHS compliance and lead-free status directly with authorized distributors before procurement. Ensure the ordering part number matches the required package and electrical specifications exactly.
Selection Notes
Select this component for applications requiring a 60V rating and high current handling up to 36A. The low R_DS(on) makes it suitable for efficiency-critical designs. Consider the TO-252 package constraints regarding thermal management and PCB layout. Verify that the gate drive voltage supports the specified R_DS(on) conditions for optimal performance.
Part Context
This part belongs to Renesas' discrete power transistor lineup, specifically designed as a single N-channel MOSFET. It is distinct from the company's microprocessor units, such as the RZ/T series, which are used for control logic rather than power switching. The 2SK3402 series focuses on power delivery and switching capabilities within electronic systems.
Replacement Considerations
Publicly confirmed substitute part numbers for the 2SK3402-ZK-E1-AY are not available in the provided documentation. Users should consult official Renesas resources or authorized distributors for qualified alternatives if this specific variant is unavailable.
