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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3430(02)-S6-AZ is an N-channel Power MOS FET designed for industrial high-current switching applications. It features super low on-state resistance, with R_DS(on)1 at a maximum of 7.3 mΩ (V_GS = 10 V, I_D = 40 A) and R_DS(on)2 at a maximum of 15 mΩ (V_GS = 4 V, I_D = 40 A). The device has a typical input capacitance (C_iss) of 2800 pF. It is supplied in the TO-262 package.
Feature Summary
- Designed for high current switching applications
- Super low on-state resistance for efficient power handling
- Low input capacitance for improved switching performance
Applications
- Industrial motor control systems
- High current DC-DC converters
- Power supply units requiring robust N-channel switching
Procurement Notes
Verify component authenticity through authorized Renesas distributors due to obsolete status. Confirm package integrity as the TO-262 form factor may vary by manufacturing batch. Check for specific ordering suffixes that denote tape-and-reel or bulk packaging variations. Ensure storage conditions meet semiconductor standards to prevent moisture sensitivity issues prior to soldering.
Selection Notes
Select this component when low conduction losses are critical in industrial environments. Compare R_DS(on) specifications against thermal management capabilities. Ensure gate drive voltage aligns with the 10 V and 4 V test conditions for optimal resistance values. Verify that the TO-262 package fits the available PCB footprint and thermal dissipation requirements.
Part Context
This part belongs to the 2SK3430 series of N-channel MOS FETs from Renesas Electronics. The series is engineered for industrial use, emphasizing durability and efficiency in power switching roles. The specific suffix indicates the package type and reel configuration, distinguishing it from other variants like the TO-220AB or TO-220SMD versions within the same functional family.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. As the product is marked as no longer manufactured, direct replacements must be sourced from secondary markets or evaluated based on pin-compatible alternatives with matching electrical characteristics.
