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Product Detailed Parameters
- Description：MOSFET N-CH 40V 83A TO220AB
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：5.6mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6100 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta), 100W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The 2SK3431-Z-E1-AZ is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-to-source voltage (VDSS) of 40 V and a continuous drain current (ID) of 83 A at case temperature (Tc). The device exhibits a typical on-resistance (RDS(on)) of 0.0056 Ω. Power dissipation capabilities are rated at 1.5 W at ambient temperature (Ta) and 100 W at case temperature (Tc). The component utilizes the Mp-25Z package variant, physically housed in a TO-220Smd form factor with dimensions of 8 mm width and 4.8 mm thickness.
Feature Summary
- N-channel single power MOSFET architecture designed for high-current switching applications
- Low on-resistance characteristic to minimize conduction losses
- Robust thermal performance supporting significant power dissipation at case temperature
Applications
- Industrial control systems requiring reliable power switching
- Automotive electronics utilizing low-voltage power management
- General-purpose power conversion circuits
Procurement Notes
Verify the specific suffix codes against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Ensure the procurement channel provides traceability to the manufacturer. Confirm that the received components match the Mp-25Z/TO-220Smd physical description. Check for any regional distribution restrictions or authenticity guarantees provided by the supplier before finalizing orders.
Selection Notes
Select this component when a 40 V N-channel MOSFET with high current handling capability is required. The low RDS(on) makes it suitable for efficiency-critical designs. Consider the TO-220Smd package constraints for PCB layout and thermal management solutions. Evaluate the 100 W Tc dissipation rating against your heatsinking strategy to ensure safe operating area compliance under load conditions.
Part Context
This part belongs to Renesas' portfolio of discrete power semiconductors. It is categorized as a single FET within the broader power MOSFET family. The product line supports various industrial and automotive applications requiring robust switching elements. Renesas integrates such components into larger power management solutions for modern electronic systems.
Replacement Considerations
Publicly confirmed substitute part numbers for the 2SK3431-Z-E1-AZ were not identified in available verified sources. Cross-reference electrical parameters carefully if considering alternative manufacturers. Verify pinout compatibility and thermal characteristics before substituting.
