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Product Detailed Parameters
- Description：NCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SK3491-TL-E is an N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 1A. The device belongs to the 4V Drive Series, indicating optimized gate threshold characteristics for low-voltage logic control. Packaged in a TO-251 surface-mount case, it offers a compact form factor suitable for space-constrained designs. This component serves as a robust solution for high-voltage, low-current switching tasks in industrial and consumer electronics.
Feature Summary
- High breakdown voltage capability of 600V for reliable operation in demanding electrical environments
- Optimized for 4V drive logic compatibility to facilitate integration with standard microcontrollers
- Surface-mount TO-251 package design enabling efficient thermal management and automated assembly
Applications
- Power supply output stages
- Motor control circuits
- Industrial automation switching
Procurement Notes
Verify the specific suffix 'TL-E' against the manufacturer's latest datasheet to confirm pinout and tape-and-reel specifications. Ensure the procurement channel provides valid RoHS compliance documentation. Cross-reference the part number with official onsemi databases to avoid counterfeit components, as this series may have multiple packaging variants.
Selection Notes
Select this component when a 600V rating is required with a modest 1A current capacity. The 4V drive series characteristic makes it suitable for systems using 3.3V or 5V logic gates without additional level shifting. Consider the TO-251 package constraints regarding PCB real estate and thermal dissipation requirements compared to larger through-hole alternatives.
Part Context
This MOSFET is part of onsemi's discrete semiconductor portfolio, specifically targeting general-purpose power switching. It complements other devices in the company's lineup by offering a balance between voltage handling and drive simplicity. The TO-251 format is widely used in commercial and industrial equipment where reliability and moderate power density are prioritized over extreme miniaturization.
Replacement Considerations
Consult official substitution guides for equivalent 600V N-channel MOSFETs in TO-251 packages. Verify that alternative parts match the 1A current rating and 4V drive logic compatibility. Ensure thermal performance and pinout configurations are identical to prevent redesign efforts.
