2SK3539G0L

2SK3539G0L

  • Description:MOSFET N-CH 50V 100MA SMINI3-F2
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)

SKU:2cfd2ef08ad7 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 50V 100MA SMINI3-F2
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
  • Rds On (Max) @ Id, Vgs:12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id:1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±7V
  • Input Capacitance (Ciss) (Max) @ Vds:12 pF @ 3 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SMini3-F2
  • Package / Case:SC-85

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2SK3539G0L

Overview

The Panasonic 2SK3539G0L is a silicon N-channel MOSFET designed for switching applications. It features a wide frequency band and includes a built-in gate protection diode. The device operates with a drain-source voltage of 50 V, a continuous drain current of 100 mA, and a peak drain current of 200 mA. Power dissipation is rated at 150 mW. It utilizes the SMini3-G1 package (EIAJ: SC-70) and complies with the RoHS Directive.

Feature Summary

  • High-speed switching capability
  • Wide frequency band operation
  • Built-in gate protection diode

Applications

  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments
  • Household appliances

Procurement Notes

Verify component status as this product falls under maintenance or discontinued categories. Consult official manufacturer channels for the latest lifecycle information before procurement. Ensure design requirements align with standard application guidelines, avoiding special applications requiring exceptional reliability without prior consultation.

Selection Notes

Select based on 50 V drain-source voltage and 100 mA continuous current limits. Consider the 150 mW power dissipation rating and 150 °C channel temperature limit. Verify compatibility with the SMini3-G1 surface-mount package dimensions and ensure circuit conditions remain within absolute maximum ratings to prevent failure.

Part Context

This component belongs to the Panasonic Silicon MOSFETs (Small Signal) series. It is specifically engineered for switching functions, offering high-speed performance and wide frequency bandwidth. The inclusion of an internal gate protection diode enhances its utility in general-purpose electronic circuits where robust signal handling is required.

Replacement Considerations

No public confirmed substitute part numbers are available.

2SK3539G0L2SK3539G0L

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