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The Panasonic 2SK3539G0L is a silicon N-channel MOSFET designed for switching applications. It features a wide frequency band and includes a built-in gate protection diode. The device operates with a drain-source voltage of 50 V, a continuous drain current of 100 mA, and a peak drain current of 200 mA. Power dissipation is rated at 150 mW. It utilizes the SMini3-G1 package (EIAJ: SC-70) and complies with the RoHS Directive.
Verify component status as this product falls under maintenance or discontinued categories. Consult official manufacturer channels for the latest lifecycle information before procurement. Ensure design requirements align with standard application guidelines, avoiding special applications requiring exceptional reliability without prior consultation.
Select based on 50 V drain-source voltage and 100 mA continuous current limits. Consider the 150 mW power dissipation rating and 150 °C channel temperature limit. Verify compatibility with the SMini3-G1 surface-mount package dimensions and ensure circuit conditions remain within absolute maximum ratings to prevent failure.
This component belongs to the Panasonic Silicon MOSFETs (Small Signal) series. It is specifically engineered for switching functions, offering high-speed performance and wide frequency bandwidth. The inclusion of an internal gate protection diode enhances its utility in general-purpose electronic circuits where robust signal handling is required.
No public confirmed substitute part numbers are available.