2SK3541T2L

$0.32

Description：MOSFET N-CH 30V 100MA VMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fb7541a6951e Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 100MA VMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：VMT3
Package / Case：SOT-723

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2SK3541T2L

Overview

The ROHM 2SK3541T2L is a silicon N-channel MOSFET designed for low-voltage drive applications. It features a VDS of 30V and an ID of 100mA, with a gate-source voltage rating of ±20V. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a maximum RDS(on) of 1.5Ω at VGS=2.5V and 10mA, or 1.0Ω at VGS=4V. It includes an internal gate protection diode and is housed in a VMT3 (SOT-723) package.

Feature Summary

Low on-resistance optimized for portable equipment efficiency
Fast switching speed suitable for high-frequency operations
Integrated gate protection diode against static electricity
Simple drive circuits enabled by 2.5V low voltage operation

Applications

Interfacing circuits
Switching applications
Portable electronic equipment

Procurement Notes

Verify the current manufacturing status before procurement, as this component is marked 'Not Recommended for New Designs'. Confirm that the VMT3 taping specifications align with existing assembly lines. Ensure compliance with RoHS directives and verify that the application does not require radiation tolerance or automotive-grade reliability standards.

Selection Notes

Select this component for general-purpose switching where low voltage drive capability is required. Consider the 30V drain-source voltage limit and 100mA continuous current rating during design. Evaluate thermal dissipation requirements based on the 150mW power dissipation limit. Verify that the VMT3 package dimensions fit the target PCB layout constraints.

Part Context

This part belongs to ROHM's discrete transistor portfolio, specifically focusing on N-channel MOSFETs for consumer electronics. It serves as a standard solution for low-power switching tasks in devices requiring compact surface-mount packaging. The product line emphasizes energy efficiency through low on-state resistance characteristics.