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The Panasonic 2SK3546G is a silicon N-channel MOSFET designed for switching applications. It features high-speed switching capabilities and a wide frequency band. The device operates with a drain-source voltage of 50 V and a continuous drain current of 100 mA. Key electrical parameters include a gate threshold voltage ranging from 0.9 V to 1.5 V, and a maximum drain-source ON resistance of 15 Ω at VGS = 2.5 V. The component utilizes an SSMini3-F3 package.
Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages. Confirm that the latest product standards satisfy design requirements, as specifications are subject to change without notice. Ensure compliance with export control laws if applicable. Consult sales staff for special application inquiries.
Select this component for standard applications requiring small signal switching. Verify that the operating conditions remain within absolute maximum ratings, particularly regarding transient states like power-on and mode-switching. Consider thermal stress and ESD precautions during handling. Ensure the required switching speed aligns with the specified turn-on and turn-off times.
This part belongs to the Silicon Junction FETs (Small Signal) category from Panasonic Semiconductor. It is specifically categorized as a Silicon N-Channel MOSFET intended for general-purpose switching tasks. The product complies with the RoHS Directive (EU 2002/95/EC).
Public confirmed substitute part numbers are not provided in the source material.