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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The Renesas 2SK3573-ZK-E1-AZ is an N-channel power MOSFET designed for high-current switching applications. It features a drain current of 83A and a maximum drain-source voltage of 20V. The device exhibits a low on-resistance of 4mΩ at a gate drive of 10V, ensuring efficient power handling with minimal conduction losses. Key electrical parameters include a total gate charge of 68nC at 10V and a continuous power dissipation rating of 105W. These specifications support its use in robust power management circuits requiring reliable performance under significant load conditions.
Feature Summary
- N-channel power MOSFET architecture optimized for high-efficiency switching operations
- Low on-resistance characteristic to minimize conduction losses during active states
- High drain current capability suitable for demanding power delivery requirements
Applications
- DC-DC converter modules
- Motor control driver circuits
- Power supply output stages
Procurement Notes
Verify the specific suffix (E1-AZ) against the manufacturer's latest datasheet to confirm compliance with RoHS3 standards and lead-free status. Ensure the ordering quantity aligns with the manufacturer's standard packaging units. Cross-reference the part number with official Renesas documentation to validate availability and technical specifications before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring an N-channel MOSFET with an 83A current capacity and 20V voltage rating. The low 4mΩ on-resistance makes it suitable for applications prioritizing efficiency. Consider the 105W power dissipation limit and thermal management requirements for the surface-mount package when integrating into the system design.
Part Context
This component belongs to Renesas Electronics Corporation's portfolio of discrete power semiconductors. It is classified as a single FET within the MOSFET category. The device utilizes a surface-mount technology package, facilitating automated assembly in modern electronic manufacturing processes for various industrial and consumer electronics applications.
Replacement Considerations
Consult official Renesas documentation for confirmed substitute part numbers. Verify pin compatibility and electrical parameter equivalence before substituting.
