ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL SILICON MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SK3615-TL-E is an N-channel silicon MOSFET designed for general-purpose switching applications. Key electrical parameters include a drain-source voltage (Vds) of 60 V, a maximum continuous drain current (Id) of 12 A, and an on-state resistance (Rds(on)) of 45 mOhm. The device supports a power dissipation (Pd) of 20 W and features a three-pin configuration.
Feature Summary
- N-channel silicon construction for reliable switching performance
- Low on-state resistance to minimize conduction losses
- General-purpose design suitable for various electronic circuits
Applications
- General-purpose switching devices
- Power management circuits
- Electronic load applications
Procurement Notes
Verify the manufacturer part number 2SK3615-TL-E against official onsemi documentation to ensure authenticity. Confirm that the component matches the specified N-channel silicon MOSFET characteristics. Check for any specific ordering suffixes or package variations that may affect compatibility with your design requirements.
Selection Notes
Select this component when a 60 V, 12 A N-channel MOSFET is required for general switching tasks. Ensure the thermal management solution supports the 20 W power dissipation rating. Verify that the 45 mOhm on-state resistance meets the efficiency requirements of the target application circuit.
Part Context
This component belongs to the single FET, MOSFET category within onsemi's discrete semiconductor portfolio. It is derived from Sanyo technology acquired by onsemi. The device is distinct from the Treo platform, which utilizes BCD processes for integrated circuits rather than discrete transistors.
Replacement Considerations
The 2SK3615-E is a related variant without the TL-E suffix. Verify if the packaging or specific testing criteria differ between these part numbers before substitution.
