2SK3617-E

2SK3617-E

$0.57
  • Description:NCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:438336d6d99b Category: Brand:

  
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Product Detailed Parameters

  • Description:NCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK3617-E

Overview

The onsemi 2SK3617-E is an N-channel silicon MOSFET designed for general-purpose switching applications. It features a TO-252 (DPAK) surface-mount package and supports a drain-source voltage of 100 V with a continuous drain current of 6 A. The device exhibits a low on-resistance of 0.18 ohms, optimizing efficiency in power management circuits.

Feature Summary

  • N-channel silicon construction for reliable switching performance
  • Low on-resistance to minimize conduction losses
  • Surface-mount TO-252 package for automated assembly

Applications

  • General-purpose switching devices
  • Power management circuits
  • DC-DC converter stages

Procurement Notes

Verify the specific suffix against official documentation to confirm exact electrical tolerances and packaging variations. Ensure the component matches the required thermal dissipation capabilities for the intended circuit design before finalizing procurement orders.

Selection Notes

Select this component for applications requiring moderate voltage handling and efficient switching in compact form factors. Evaluate the thermal resistance characteristics of the DPAK package to ensure adequate heat dissipation under maximum load conditions within the system enclosure.

Part Context

This part belongs to the single FET MOSFET category from onsemi. It serves as a discrete power switch solution, distinct from integrated power modules or complex driver ICs, focusing on fundamental transistor switching functionality.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is 100 V.

Which package type does this MOSFET use?

It utilizes a TO-252 (DPAK) surface-mount package.

2SK3617-E2SK3617-E
$0.57
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