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The onsemi 2SK3617-E is an N-channel silicon MOSFET designed for general-purpose switching applications. It features a TO-252 (DPAK) surface-mount package and supports a drain-source voltage of 100 V with a continuous drain current of 6 A. The device exhibits a low on-resistance of 0.18 ohms, optimizing efficiency in power management circuits.
Verify the specific suffix against official documentation to confirm exact electrical tolerances and packaging variations. Ensure the component matches the required thermal dissipation capabilities for the intended circuit design before finalizing procurement orders.
Select this component for applications requiring moderate voltage handling and efficient switching in compact form factors. Evaluate the thermal resistance characteristics of the DPAK package to ensure adequate heat dissipation under maximum load conditions within the system enclosure.
This part belongs to the single FET MOSFET category from onsemi. It serves as a discrete power switch solution, distinct from integrated power modules or complex driver ICs, focusing on fundamental transistor switching functionality.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.
The maximum drain-source voltage rating is 100 V.
It utilizes a TO-252 (DPAK) surface-mount package.