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Product Detailed Parameters
- Description：MOSFET N-CH 900V 5A TO3P
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：150W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P(N)
- Package / Case：TO-3P-3, SC-65-3
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Overview
The Toshiba Semiconductor and Storage 2SK3700(F) is an N-channel Silicon MOSFET designed for switching regulator applications. It utilizes the π-MOSIV structure to achieve low drain-source ON-resistance of 2.5 Ω (typical), high forward transfer admittance of 4.5 S (typical), and low leakage current of 100 μA maximum at VDS=720V. The device operates in enhancement mode with a threshold voltage ranging from 2.0 to 4.0 V. It is housed in a compact surface-mount package suitable for space-constrained designs.
Feature Summary
- Utilizes π-MOSIV double-diffusion structure for high withstand voltage and ruggedness
- Features low ON-resistance and high forward transfer admittance for efficient switching
- Includes built-in avalanche capability to simplify circuit design
- Enhanced internal diode functionality improves circuit design flexibility
Applications
- Switching regulators
- AC adapters
- Motor drivers
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging, tape-and-reel specifications, and environmental compliance status. Ensure the component matches the required pinout and thermal characteristics for your PCB layout. Cross-reference the manufacturer's latest datasheet to confirm availability and any potential lifecycle changes before finalizing procurement plans.
Selection Notes
Select this component for applications requiring moderate current handling with high voltage tolerance. The π-MOSIV technology offers a balance between switching speed and conduction loss. Consider the thermal performance of the chosen package variant when designing heat dissipation strategies. Verify that the gate drive voltage aligns with the specified threshold range for optimal performance.
Part Context
This part belongs to Toshiba's standard MOSFET portfolio, specifically utilizing the π-MOSIV technology. This series is engineered for general-purpose switching applications where reliability and efficiency are critical. The device represents a mature product line known for consistent performance in power management circuits.
Replacement Considerations
Consult official Toshiba substitution guides for verified equivalents. Ensure any replacement maintains compatible voltage ratings, current capabilities, and package dimensions.
