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Product Detailed Parameters
- Description：MOSFET N-CH 60V 45A TO220ML
- Series：-
- Mfr：onsemi
- Package：Bag
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3500 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SK3704 is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features low ON-resistance and ultrahigh-speed switching capabilities, optimized for 4V drive applications. Key electrical parameters include a Drain-to-Source Voltage (VDSS) of 60 V, a continuous Drain Current (ID) of 45 A at Tc=25°C, and a pulse Drain Current (IDP) of 180 A. The static Drain-to-Source On-State Resistance (RDS(on)) ranges from 10.5 mΩ to 14 mΩ at VGS=10V, and 15 mΩ to 21 mΩ at VGS=4V. Total Gate Charge (Qg) is 67 nC.
Feature Summary
- Ultrahigh-speed switching performance with defined turn-on and turn-off times.
- Optimized for 4V gate drive operation while maintaining low on-state resistance.
- Capable of handling high avalanche energy and current pulses.
Applications
- Motor drive circuits
- DC / DC Converter topologies
Procurement Notes
Verify the manufacturer origin carefully, as the datasheet identifies SANYO Electric Co., Ltd. as the original publisher. Confirm that the specific ordering suffix matches the required package and tape/reel specifications. Ensure compliance with export control classifications such as EAR99 before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust 60V blocking capability and high current handling up to 45A. Consider the thermal dissipation limits, which drop significantly from 30W at case temperature to 2.0W at ambient temperature. Evaluate the gate charge requirements against driver capabilities to ensure efficient switching speeds are achieved.
Part Context
This part belongs to the family of N-Channel Silicon MOSFETs manufactured by onsemi (formerly SANYO). It is housed in a TO-220ML package. The device is positioned as a general-purpose switching solution suitable for power conversion and motor control environments where moderate voltage ratings and high efficiency are required.
Replacement Considerations
Consult official substitution lists or cross-reference databases for verified equivalents. Do not assume pin-compatible replacements without verifying absolute maximum ratings and electrical characteristics against the original datasheet specifications.
FAQ
What is the maximum allowable power dissipation at ambient temperature?
The allowable power dissipation is limited to 2.0 W when operating at an ambient temperature (Ta) of 25°C.
How does the on-state resistance vary with gate-source voltage?
At VGS=10V, RDS(on) is typically 10.5 mΩ to 14 mΩ. At VGS=4V, it increases to a typical range of 15 mΩ to 21 mΩ under the same drain current conditions.
