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Product Detailed Parameters
- Description：MOSFET N-CH 100V 20A TO220F-3SG
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 25W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3SG
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SK3707-1E is an N-channel silicon MOSFET designed for general-purpose switching applications. It features a drain-to-source voltage rating of 100V and a continuous drain current capacity of 20A at 25°C case temperature. The device exhibits a typical on-resistance of 45mΩ when driven by a 4V gate signal, with an input capacitance of 2150pF. Absolute maximum ratings include a gate-to-source voltage limit of ±20V and an allowable power dissipation of 2W under specific thermal conditions.
Feature Summary
- N-channel silicon construction optimized for general-purpose switching tasks
- Low on-resistance characteristics enabled by 4V drive compatibility
- Robust avalanche energy handling capability for single-pulse stress events
Applications
- General-purpose electronic circuit switching
- Power management modules requiring moderate voltage isolation
- Industrial control systems utilizing standard logic interfaces
Procurement Notes
Verify the obsolete status and end-of-life designation before finalizing design specifications. Confirm availability through authorized distributors as manufacturing may have ceased. Ensure all electrical parameters match the original datasheet requirements to maintain system reliability and safety compliance during the transition period.
Selection Notes
Select this component for applications requiring a 100V breakdown voltage and 20A current handling capability. Consider the 45mΩ on-resistance for efficiency calculations in low-voltage drive scenarios. Evaluate thermal management needs based on the 2W power dissipation rating and ensure the operating junction temperature remains within the specified 150°C limit for long-term stability.
Part Context
This part belongs to the broader category of discrete power semiconductors manufactured by onsemi. It serves as a fundamental building block for power conversion and control circuits. The device utilizes standard surface-mount or through-hole packaging technologies compatible with automated assembly processes commonly found in consumer and industrial electronics manufacturing lines.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with potential alternatives from other manufacturers before implementation.
