2SK3707-1EX

$0.62

Description：NCH 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:6d52b7f76d72 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3707-1EX

Overview

The onsemi 2SK3707-1EX is an N-channel silicon MOSFET designed for general-purpose switching applications. It features a drain-to-source voltage rating of 100 V and a continuous drain current capacity of 20 A at 25°C case temperature. The device exhibits a typical on-resistance (RDS(on)) of 45 mΩ when driven by a gate voltage of 4 V, with an input capacitance of 2150 pF. Absolute maximum ratings include a gate-to-source voltage limit of ±20 V, a pulse drain current of 80 A, and an allowable power dissipation of 2.0 W. The component supports a channel temperature up to 150°C and a storage temperature range extending to 150°C.

Feature Summary

N-channel silicon MOSFET construction optimized for general-purpose switching tasks
Low on-resistance characteristic enabling efficient power handling under standard drive conditions
Robust avalanche energy capability supporting single-pulse transient stress events

Applications

General-purpose electronic circuit switching
Power management modules requiring low-voltage high-current control

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact package type and tape-and-reel specifications. Ensure that the requested variant matches the required thermal characteristics and pinout configuration for your design. Cross-reference the datasheet revision date to guarantee access to the most current absolute maximum ratings and electrical parameters before finalizing procurement orders.

Selection Notes

Select this component for designs requiring a 100 V N-channel MOSFET with moderate current handling capabilities. Evaluate the 45 mΩ on-resistance against your conduction loss requirements at the intended operating current. Confirm that the 2.0 W power dissipation rating aligns with your thermal management strategy, as the device relies heavily on case temperature for heat removal rather than ambient air cooling.

Part Context

This part belongs to the broader family of N-channel silicon MOSFETs manufactured by onsemi, often distributed under legacy SANYO branding identifiers. These devices are engineered for cost-effective solutions in consumer electronics and industrial equipment where standard switching performance is sufficient. The 2SK3707-1EX specifically targets applications needing reliable operation within the 100 V voltage class without requiring specialized high-frequency or ultra-low resistance characteristics.