2SK3708

Description：MOSFET N-CH 100V 30A TO220ML
Series：-
Mfr：onsemi
Package：Bulk

SKU:7065fdaa2dbd Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 30A TO220ML
Series：-
Mfr：onsemi
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220ML
Package / Case：TO-220-3 Full Pack

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2SK3708

Overview

The onsemi 2SK3708 is an N-Channel Silicon MOSFET designed for general-purpose switching applications. It features a Drain-to-Source Voltage (V_DSS) of 100 V and supports a continuous Drain Current (I_D) of 30 A at Tc=25°C, with a pulsed current capability of 120 A. The device offers low ON-resistance, rated at a maximum of 33 mΩ at V_GS=10V and 42 mΩ at V_GS=4V. Key electrical characteristics include a Gate-to-Source Voltage limit of ±20 V, a total gate charge of 73 nC, and avalanche energy resistance of 281 mJ. The component operates within a channel temperature range up to 150°C and is housed in a TO-220ML package.

Feature Summary

Low ON-resistance optimized for efficient power switching.
Capable of direct 4V drive logic control.
Guaranteed avalanche resistance for robust inductive load handling.

Applications

Motor driver circuits
DC / DC converter topologies

Procurement Notes

Verify the specific manufacturer origin, as the datasheet indicates SCILLC (SANYO Semiconductor International Co., Ltd.) authorship while the brand is listed as onsemi. Confirm the package type matches the required thermal and mechanical constraints, specifically the TO-220ML form factor. Ensure the application environment respects the absolute maximum ratings for drain current and power dissipation to maintain reliability.

Selection Notes

Select this component when high current switching at 100 V is required with low conduction losses. The 4V drive capability makes it suitable for systems where gate drive voltage may be limited. Consider the thermal management requirements carefully, as allowable power dissipation drops significantly as case temperature rises above 25°C. Verify that the package footprint aligns with the PCB layout design.

Part Context

This part belongs to the family of N-Channel Silicon MOSFETs intended for general-purpose switching. It is distinct from smaller signal transistors due to its high current capacity (30 A) and power handling capabilities. The device integrates an internal body diode with a forward voltage of approximately 0.92 V, facilitating use in half-bridge or synchronous rectification configurations without external diodes.