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Product Detailed Parameters
- Description：MOSFET N-CH 60V 85A TO220S
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：85A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：100W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-220S
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The 2SK3710 is an N-Channel MOSFET manufactured by Sanken Electric. It features a Drain-Source Voltage (VDS) of 60 V and a Gate-Source Voltage (VGSS) of ±20 V. The continuous Drain Current (ID) is rated at 85 A at Ta=25°C, with a Power Dissipation (PD) of 100 W at Tc=25°C. Key electrical parameters include a typical On-Resistance (RDS(on)) of 5.0 mΩ at VGS=10V, a Threshold Voltage (VTH) range of 2.00 V to 4.00 V, Input Capacitance (Ciss) of 8000 pF, and Reverse Transfer Capacitance (Crss) of 1000 pF.
Feature Summary
- Low on-state resistance for efficient power handling
- Built-in gate protection diode for enhanced reliability
Applications
- Power switching circuits
- DC-DC converters
- Motor control applications
Procurement Notes
Verify the specific package variant, as datasheets indicate D2PAK marking while distributors list TO-220S. Confirm thermal characteristics match your heatsinking requirements. Ensure the supplier provides official Sanken documentation to validate the 85A current rating under your specific ambient conditions.
Selection Notes
Select this component for low-voltage, high-current applications requiring robust gate protection. The 60V rating suits 48V systems. Compare RDS(on) and capacitance values against competitors for switching speed optimization. Verify pinout compatibility if replacing existing designs.
Part Context
This device belongs to Sanken's power MOSFET lineup designed for industrial and automotive use. It offers a balance of low conduction losses and high current capacity. The integrated gate diode simplifies circuit design by protecting against voltage spikes.
Replacement Considerations
The Renesas 2SK3712 is documented as an industry-standard equivalent. Verify pinout and thermal performance before substitution. Other N-channel MOSFETs with similar 60V/85A ratings may be considered if electrical parameters align.
