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The 2SK3738-TL-E is an N-Channel JFET manufactured by onsemi, designed for low-power signal processing applications. It operates with a Drain-to-Source Voltage (V_DSS) of 40 V and a Gate-to-Drain Voltage (V_GDS) of -40 V. The device features a typical Drain Current (I_DSS) range of 50 to 130 μA at V_DS=10V and V_GS=0V. Forward Transfer Admittance (|y_fs|) ranges from 0.06 to 0.13 mS at 1 kHz. Input Capacitance (C_iss) is typically 1.7 pF, and Reverse Transfer Capacitance (C_rss) is 0.7 pF at 1 MHz. The maximum allowable power dissipation is 100 mW, with a junction temperature rating up to 150 °C.
Verify the ordering suffix TL-E confirms the embossed tape and reel packaging format containing 3,000 pieces per reel. Ensure the component designation matches the specific Pb-free marking requirements defined in the manufacturer's documentation to guarantee correct supply chain fulfillment.
Select this component when designing circuits requiring minimal input capacitance and extremely low gate leakage currents. The small-signal characteristics make it suitable for precision analog front-ends where preserving signal fidelity at low current levels is critical for overall system performance.
This part belongs to the 2SK3738 family of N-Channel Junction Field-Effect Transistors produced by onsemi. It utilizes the SMCP (SC-75/SOT-416) surface-mount package, providing a compact footprint for modern electronic assemblies while maintaining the electrical isolation properties inherent to JFET technology.
Consult official cross-reference databases for verified substitutes. Ensure any replacement maintains the 40 V voltage rating, similar I_DSS range, and compatible SMCP package dimensions to preserve board layout and thermal performance without redesign.