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Product Detailed Parameters
- Description：MOSFET N-CH 1500V 2A TO220F-3FS
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：13Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 35W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F-3FS
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SK3745LS-1E is an N-channel power MOSFET designed for high-speed switching applications. It features a 1500V drain-source voltage rating and a continuous drain current of 2A at ambient temperature. The device exhibits a low on-resistance of 13Ω, contributing to efficient power management. It is housed in a TO-220F-3FS through-hole package, capable of dissipating 2W at ambient temperature and up to 35W when mounted to a case. Key electrical characteristics include low input capacitance, which supports rapid switching speeds.
Feature Summary
- High breakdown voltage capability suitable for demanding power environments
- Low on-resistance for improved conduction efficiency
- Optimized for high-speed switching operations
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- High-frequency switching regulators
Procurement Notes
Verify the specific suffix -1E against your bill of materials, as it denotes the tape-and-reel packaging configuration within the TO-220F-3FS form factor. Confirm that the procurement channel provides original manufacturer documentation to ensure authenticity. Check for any obsolescence notices, as availability may vary due to lifecycle status changes.
Selection Notes
Select this component when a robust N-channel MOSFET with 1500V blocking capability is required in a through-hole format. The 13Ω on-resistance makes it suitable for moderate current applications where thermal management via a heatsink is feasible. Ensure the circuit design accounts for the 2A continuous current limit at ambient conditions.
Part Context
This part belongs to onsemi's portfolio of discrete power semiconductors. It serves as a specialized solution for high-voltage applications requiring reliable performance in through-hole assemblies. The device complements other high-voltage MOSFETs by offering a balance of voltage rating and switching speed in a standard industrial package.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing designs before considering alternative components from other manufacturers.
