2SK3746-1E

Description：MOSFET N-CH 1500V 2A TO3P-3L
Series：-
Mfr：onsemi
Package：Tube

SKU:661371051526 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1500V 2A TO3P-3L
Series：-
Mfr：onsemi
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1500 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：37.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 110W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P-3L
Package / Case：TO-3P-3, SC-65-3

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2SK3746-1E

Overview

The 2SK3746-1E is an N-channel power MOSFET manufactured by onsemi, housed in a TO-3P-3L package. It features a drain-to-source voltage rating of 1500 V and a continuous drain current capacity of 2 A at 25°C case temperature. The device exhibits a maximum static drain-to-source on-state resistance of 13 Ω at VGS=10V and ID=1A. Total gate charge is specified at 37.5 nC under standard test conditions. Power dissipation capabilities include 2.5 W at ambient temperature and 110 W when mounted to a case at 25°C.

Feature Summary

Low ON-resistance and low input capacitance for ultrahigh-speed switching
High reliability achieved through the adoption of HVP process
Guaranteed avalanche resistance capability

Applications

High-voltage power conversion circuits
Switching applications requiring fast response times
Industrial power management systems

Procurement Notes

Verify component authenticity against official datasheet specifications before integration. Confirm that the TO-3P-3L package dimensions align with your PCB footprint requirements. Ensure thermal management solutions support the specified power dissipation limits. Check for RoHS compliance documentation if required by your manufacturing standards. Validate all electrical parameters against your specific operating conditions.

Selection Notes

Select this component for applications demanding high voltage isolation and rapid switching speeds. Consider the 1500 V breakdown voltage for high-side or flyback configurations. Evaluate thermal performance based on the 13 Ω RDS(on) value at expected load currents. Verify that gate drive voltages remain within the ±20 V limit. Assess avalanche energy requirements against the guaranteed single-pulse rating.

Part Context

This part belongs to the 2SK3746 series of N-channel power MOSFETs from onsemi. It utilizes a silicon technology optimized for high-voltage operations. The TO-3P-3L package provides robust mechanical stability and efficient heat dissipation pathways. The device is designed for use in environments requiring reliable power switching under high stress conditions.