2SK3793-AZ

$0.98

Description：MOSFET N-CH 100V 12A TO220
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:cb673dfeaf78 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 12A TO220
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：125mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 20W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220 Isolated Tab
Package / Case：TO-220-3 Isolated Tab

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2SK3793-AZ

Overview

The 2SK3793-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a breakdown voltage of 100V and a continuous drain current rating of 12A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 0.125Ω. It is housed in a TO-220 package with an isolated tab, suitable for through-hole mounting. This component utilizes split-gate technology to enhance performance in high-current switching applications.

Feature Summary

Utilizes split-gate technology for improved switching efficiency
Designed specifically for high-current DC-DC conversion applications
Features wettable flank leads to ensure reliable solder joint integrity

Applications

DC-DC converter circuits
High-current switching applications
Power management systems requiring robust N-channel MOSFETs

Procurement Notes

This component is officially classified as obsolete and is no longer manufactured by Renesas Electronics Corporation. Procurement should focus exclusively on verified substitute part numbers listed in official documentation. Buyers must confirm availability through authorized channels and verify that replacement components meet the original electrical specifications and mechanical footprint requirements before integration into designs.

Selection Notes

Engineers selecting this component should prioritize its 100V rating and 12A current capacity for medium-power switching tasks. The TO-220 isolated tab package facilitates thermal management via heatsinking. Due to its obsolete status, alternative solutions must be evaluated for equivalent Rds(on) and gate charge characteristics to maintain circuit efficiency and thermal performance in existing designs.

Part Context

The 2SK3793-AZ belongs to Renesas' portfolio of silicon MOSFETs designed for power electronics. It is part of a series utilizing advanced split-gate architecture to minimize conduction losses. While the specific -AZ suffix denotes packaging or compliance variations, the core device remains a standard N-channel enhancement mode transistor widely used in industrial and consumer power supplies.

Replacement Considerations

Official documentation identifies IRFI540GPBF as a similar available substitute. Engineers should verify pin compatibility and electrical parameters against the original datasheet when transitioning to this replacement component to ensure seamless integration without circuit redesign.