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Product Detailed Parameters
- Description：POWER MOSFET TRANSISTOR TO-220(S
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
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Overview
The 2SK3798(STA4,Q,M) is a Silicon N-Channel MOS Type (DTMOS II) field effect transistor manufactured by Toshiba Semiconductor and Storage. It features a drain-source voltage of 600V and a continuous drain current of 20A at 25°C. The device exhibits a typical low drain-source ON-resistance of 0.165 Ω and a high forward transfer admittance of 12 S. Maximum power dissipation is rated at 45W at Ta=25°C or 40W at Tc. The gate-source threshold voltage ranges from 3.0 to 5.0 V, with a maximum leakage current of 100 μA at 600 V.
Feature Summary
- DTMOS II technology for switching regulator applications
- Low drain-source ON-resistance
- High forward transfer admittance
- Low leakage current
Applications
- Switching Regulator Applications
Procurement Notes
Verify the specific suffix STA4,Q,M against official Toshiba documentation to confirm package type and compliance status. Ensure the component meets RoHS requirements if applicable. Cross-reference the part number with authorized distributors to confirm availability and authenticity. Check for any specific handling instructions related to the TO-220SIS package.
Selection Notes
Select this component for designs requiring a 600V N-channel MOSFET with low on-resistance. Consider the thermal management capabilities given the 40W/45W dissipation ratings. Evaluate the gate threshold voltage range for compatibility with control circuitry. Verify that the TO-220SIS package fits the mechanical constraints of the target application.
Part Context
This part belongs to Toshiba's DTMOS II series of silicon N-channel MOSFETs. These devices are optimized for high-speed and low-voltage operations in switching applications. The series typically offers improved performance metrics compared to standard MOSFETs, focusing on reduced conduction losses and enhanced switching speeds.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult Toshiba's official replacement guide or distributor cross-reference tools for verified alternatives.
