ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 70A TO220S
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：80W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-220S
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The Sanken Electric USA Inc. 2SK3800VL is an N-channel silicon MOSFET housed in a TO-220S package. It features a maximum drain-source voltage of 40V and a continuous drain current rating of 80A at 25°C case temperature. The device exhibits a low on-resistance of 5.0mΩ at VGS=10V and ID=35A, with a gate threshold voltage ranging from 2.0V to 4.0V. Key electrical characteristics include a reverse diode forward voltage of 0.9V at ISD=50A and a unclamped inductive switching energy capability of 400mJ.
Feature Summary
- High surge current handling with a pulsed drain current rating of 140A under specified pulse width and duty cycle conditions.
- Robust avalanche energy capability guaranteed for single-pulse applications without external clamping circuits.
- Low thermal resistance junction-to-case value facilitating efficient heat dissipation in power conversion modules.
Applications
- DC/DC converter circuits
- Motor drive systems
- General-purpose switching devices
Procurement Notes
Verify the specific ordering suffix against official Sanken Electric documentation to confirm exact mechanical or electrical variations. Ensure component authenticity through authorized distribution channels. Confirm that the TO-220S package dimensions match your PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component for low-voltage, high-current switching applications requiring robust avalanche performance. Evaluate the thermal management strategy based on the 62.5°C/W junction-to-ambient thermal resistance if case cooling is not utilized. Consider the 40V voltage headroom relative to system operating voltages to ensure reliable operation within absolute maximum ratings.
Part Context
This part belongs to Sanken Electric's discrete semiconductor lineup, specifically designed for power electronics. The manufacturer specializes in components for home appliances, automobiles, and industrial equipment. This MOSFET series supports power conversion technologies aimed at improving efficiency in various electronic systems.
Replacement Considerations
Consult official Sanken Electric substitution guides for verified equivalents. Do not assume pin-compatible alternatives from other manufacturers share identical avalanche ratings or thermal characteristics without direct datasheet comparison.
FAQ
What is the guaranteed unclamped inductive switching (UIS) energy rating?
The device guarantees an EAS rating of 400mJ under test conditions of VDD=20V, L=1mH, IL=20A, and RG=50Ω.
How does the on-resistance vary with temperature?
The RDS(ON) increases as the junction temperature rises. Graphs indicate significant variation between -55°C and 150°C, requiring thermal derating calculations for high-temperature environments.
