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Product Detailed Parameters
- Description：MOSFET N-CH 40V 60A TO251
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：96 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5500 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 84W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
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Overview
The 2SK3813-AZ is an N-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a 40V drain-source voltage rating and supports a continuous drain current of 60A. The device offers a maximum on-resistance of 5.3mΩ at VGS=10V and 7.1mΩ at VGS=4.5V. It is housed in a TO-251 (MP-3) through-hole package with three leads. Typical input capacitance is 5500pF, and total gate charge is 96nC. Power dissipation ratings are 1W at ambient temperature and 84W at case temperature.
Feature Summary
- N-channel silicon MOSFET technology for switching and linear load applications
- Low on-resistance characteristics optimized for efficiency
- Through-hole TO-251 package design for robust mounting
Applications
- Industrial control systems
- Consumer electronics power management
- General purpose switching circuits
Procurement Notes
This component is officially listed as obsolete and no longer manufactured by Renesas Electronics Corporation. Verification of availability should focus on surplus distributors or secondary markets rather than direct factory orders. Ensure that any sourced units match the original specifications and packaging details provided in official documentation to maintain compatibility with existing designs.
Selection Notes
Select this part for applications requiring a 40V N-channel MOSFET with high current capability in a through-hole package. Consider the thermal performance limits of 1W ambient and 84W case dissipation when designing heat sinks. Verify that the gate drive voltage aligns with the specified RDS(on) conditions for optimal conduction losses.
Part Context
The 2SK3813-AZ belongs to the family of single FETs produced by Renesas Electronics Corporation. It is designed for industrial and consumer use cases where reliable power switching is required. The MP-3 package variant provides a specific form factor distinct from surface-mount alternatives within the broader product line.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided data. As the product is obsolete, engineers must evaluate equivalent components based on matching electrical parameters such as voltage, current, and package type from other manufacturers.
