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The 2SK3814-Z-E1-AZ is an N-channel MOS Field Effect Transistor designed for high current switching applications. It features a drain-to-source voltage of 60V and a continuous drain current of 60A at case temperature or 60A at ambient temperature. The device offers an on-resistance of 8.7mΩ and dissipates 84W of power at ambient temperature. It is housed in a surface mount TO-252 (MP-3Z) package with three leads.
Verify the specific ordering suffix to ensure correct tape and reel configuration, as variations such as E1 and E2 exist. Confirm lead-free status and moisture sensitivity level requirements for your assembly process. Check regional shipping restrictions before placing orders. Ensure compatibility with standard TO-252 footprints during PCB design.
Select this component for applications requiring robust N-channel switching with moderate voltage ratings. The 60A current capacity suits high-power loads. Consider thermal management due to the 84W power dissipation rating. Verify that the 8.7mΩ on-resistance meets efficiency targets. Compare against alternative packages if space constraints differ from TO-252 dimensions.
This part belongs to Renesas Electronics Corporation's discrete semiconductor portfolio. It is classified under N-channel Single Power MOSFETs. The product line supports general-purpose power switching needs across industrial and consumer sectors. Renesas provides datasheets and ECAD models for integration support.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters when considering generic alternatives.