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Product Detailed Parameters
- Description：MOSFET N-CH 100V 40A SMP
- Series：-
- Mfr：onsemi
- Package：Bulk,Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：33mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta), 65W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：SMP
- Package / Case：TO-220-3, Short Tab
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Overview
The onsemi 2SK3821-E is an N-Channel Silicon MOSFET designed as a general-purpose switching device. It features a Drain-to-Source Voltage (VDSS) of 100 V and supports a continuous DC Drain Current (ID) of 40 A at Tc=25°C, with a pulsed current capability of 160 A. The component offers low ON-resistance, rated at a maximum of 33 mΩ at VGS=10V and 42 mΩ at VGS=4V. Key electrical parameters include a Gate-to-Source Voltage limit of ±20 V, Allowable Power Dissipation of 65 W at Tc=25°C, and a Channel Temperature rating up to 150 °C. Switching characteristics include a Turn-ON Delay Time of 30 ns and a Rise Time of 68 ns.
Feature Summary
- Low ON-resistance for efficient power handling
- Compatible with 4V drive logic levels
- Ultrahigh-speed switching performance
- Guaranteed avalanche resistance
Applications
- Motor drive systems
- DC / DC converters
Procurement Notes
Verify the exact ordering suffix against the manufacturer's official documentation to confirm package type and specific screening level. Confirm RoHS compliance status and availability directly with authorized distributors or the manufacturer, as supply chain conditions may vary. Ensure the selected variant matches the required thermal and electrical specifications for the intended circuit design.
Selection Notes
Select this component for applications requiring robust N-Channel switching with high current capacity and fast transition times. Evaluate the thermal management requirements based on the 65 W allowable power dissipation at Tc=25°C. Consider the 4V drive compatibility if interfacing with lower voltage control logic. Verify that the 100 V breakdown voltage aligns with the system's maximum operating voltages.
Part Context
The 2SK3821 is part of onsemi's portfolio of N-Channel Silicon MOSFETs. It is manufactured by Semiconductor Components Industries, LLC (SCILLC), trading as onsemi. The datasheet indicates it was originally associated with SANYO before the acquisition. The device is housed in an SMP package, which corresponds to the TO-262AB surface-mount form factor.
Replacement Considerations
Consult the manufacturer's cross-reference tools or official substitution guides for verified alternatives. Ensure any replacement maintains equivalent VDSS, ID, RDS(on), and package dimensions.
