2SK3900-ZP-E1-AZ

$1.67

Description：POWER FIELD-EFFECT TRANSISTOR
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:de92ebc7ac9c Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：POWER FIELD-EFFECT TRANSISTOR
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3900-ZP-E1-AZ

Overview

The 2SK3900-ZP-E1-AZ is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a TO-263AB (TO-263) surface-mount package with three pins and plastic/epoxy body material. The device supports enhancement mode operation and includes a built-in diode within a single-element configuration. Key electrical specifications include a maximum drain current of 82 A, a minimum drain-source breakdown voltage of 60 V, and a maximum on-resistance of 0.01 Ω. The component has an avalanche energy rating of 141 mJ and connects the case to the drain terminal.

Feature Summary

Super low on-state resistance for high efficiency in switching applications
Designed specifically for high current handling requirements
Integrated body diode within a single-element structure

Applications

High current switching circuits
Industrial equipment power management
Consumer use power stages

Procurement Notes

Verify the specific ordering suffix E1-AZ to confirm lead-free and RoHS compliance status as indicated by distributor listings. Ensure the TO-263AB package type matches the target PCB footprint. Confirm that the manufacturer designation aligns with Renesas Electronics Corporation rather than legacy NEC branding. Check for any specific storage or handling requirements associated with the embossed tape carrier format.

Selection Notes

Select this component when a robust N-channel MOSFET with low conduction losses is required for high-current environments. The 60V rating and 82A current capacity suit applications needing significant power handling in a compact surface-mount form factor. Consider the integrated diode feature if synchronous rectification or freewheeling paths are needed without adding discrete components.

Part Context

This part belongs to the 2SK3900 series of power field-effect transistors originally developed by NEC and now produced by Renesas Electronics. The series is characterized by its capability to handle substantial currents while maintaining low thermal resistance through efficient heat dissipation via the exposed drain pad in the TO-263 package.

Replacement Considerations

Direct substitutes may include other 60V N-channel MOSFETs in TO-263 packages with comparable Rds(on) and Id ratings. Verify pinout compatibility and thermal characteristics before substitution.