2SK3943-ZP-E1-AY

Description：MOSFET N-CH 40V 82A TO263
Series：-
Mfr：Renesas Electronics Corporation
Package：Cut Tape (CT)

SKU:6b706dd9f467 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 82A TO263
Series：-
Mfr：Renesas Electronics Corporation
Package：Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5.5V, 10V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 41A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5800 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 104W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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2SK3943-ZP-E1-AY

Overview

The Renesas 2SK3943-ZP-E1-AY is an N-channel silicon MOSFET designed for high-current switching applications. It features a maximum drain-source voltage of 40V and a continuous drain current rating of 82A. The device exhibits a maximum on-resistance (Rds(on)) of 0.0035Ω. It is housed in the MP-25ZP/TO-263 package with three leads. The component is lead-free and has a moisture sensitivity level of 1.

Feature Summary

N-channel power MOSFET architecture optimized for high-current switching operations
Low on-resistance characteristic to minimize conduction losses
Lead-free construction compliant with environmental standards

Applications

Industrial equipment power management
Consumer electronics power circuits
High-current switching modules

Procurement Notes

Verify the specific suffix -E1-AY against official Renesas documentation to confirm packaging and compliance details. Confirm that the MP-25ZP/TO-263 package matches your PCB footprint requirements. Check for obsolete status or lifecycle changes directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring 40V breakdown and up to 82A continuous current handling. Ensure thermal management solutions accommodate the power dissipation associated with the 0.0035Ω Rds(on) at the expected load conditions. Verify gate drive compatibility for optimal switching performance in the target application environment.

Part Context

This part belongs to Renesas' N-channel power MOSFET family, specifically engineered for robust high-current performance. The 2SK3943 series utilizes silicon technology to deliver reliable switching capabilities in compact packages suitable for modern electronic designs requiring efficient power control.