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2SK932-22-TB-E is listed in the Jfets range at ChipApex. The manufacturer field lists onsemi. Its product description is JFET N-CH 50MA SMCP. Review the specifications below when checking this part for your BOM.
The onsemi 2SK932-22-TB-E is an N-channel Junction Field-Effect Transistor (JFET) designed for surface-mount applications. It features a maximum drain-source voltage of 15 V and a continuous drain current rating of 50 mA. The device dissipates up to 200 mW of power and operates at junction temperatures reaching 150°C. Key electrical characteristics include a gate-source cutoff voltage of 200 mV at 100 µA and a typical drain-source saturation current of 7.3 to 12 mA at 5 V. Packaged in the SMCP (SOT-23-3) form factor, it offers low input capacitance of 10 pF and source-gate capacitance of 3 pF, supporting high-frequency signal integrity.
Verify the specific Idss binning (7.3 to 12 mA) required for your circuit design against the datasheet specifications. Confirm RoHS3 compliance and MSL Level 1 status during sourcing. Ensure the SMCP package dimensions match your PCB footprint constraints before finalizing procurement orders.
Select this component when a low-voltage, low-current N-channel JFET is needed for impedance matching or buffering. Compare Idss ranges against other variants like the -23 or -24 suffixes if tighter current control is necessary. Ensure the 15 V Vdss limit accommodates the maximum signal swing in the application environment.
This part belongs to the 2SK932 series of N-channel JFETs manufactured by onsemi. It shares the same basic die and packaging technology as related models but differs in specific parameter bins such as saturation current. The series is widely used in analog signal processing where low noise and high input impedance are critical requirements.
Direct pin-compatible substitutes may include other N-channel JFETs in SOT-23 packages with similar Vdss and Idss ratings. Verify that replacement devices meet the 15 V breakdown and 50 mA current limits. Cross-reference capacitance values to ensure no degradation in high-frequency performance.
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