2STA1837

Single Bipolar Transistors Overview

The 2STA1837 is a PNP power bipolar transistor manufactured using PB-HDC technology, designed for applications requiring high breakdown voltage and good gain linearity. It features a collector-emitter voltage of -230 V, a continuous collector current of -1 A, and a peak collector current of -2 A. The device exhibits a typical transition frequency of 70 MHz and a DC current gain ranging from 100 to 320 at specified test conditions. Total dissipation is rated at 20 W at 25 °C case temperature, with an operating junction temperature up to 150 °C. It is housed in a TO-220FP package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability of -230 V
• Good gain linearity behavior due to PB-HDC technology
• Complementary design to the 2STC4793 NPN transistor

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Drive stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify product status before procurement as this component is marked obsolete. Confirm availability through authorized distributors or secondary markets. Ensure the TO-220FP tube packaging matches assembly requirements. Review preliminary datasheet details carefully as specifications may be subject to change without notice during development phases.

Single Bipolar Transistors Selection Notes

Select this PNP transistor when a complementary match to the 2STC4793 is required in push-pull configurations. Consider its -230 V rating for medium-voltage switching or linear applications. Evaluate thermal management needs given the 20 W dissipation limit in the TO-220FP package. Verify that the 70 MHz transition frequency meets the bandwidth requirements of the target drive stage or audio application.

Single Bipolar Transistors Part Context

This component belongs to STMicroelectronics' power bipolar transistor portfolio, specifically utilizing PB-HDC (Power Bipolar High Density Current) technology. This technology family focuses on delivering high current density and improved gain characteristics for power switching and amplification tasks within the broader range of discrete semiconductor devices offered by the manufacturer.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2STC4793 as the complementary NPN counterpart. No other specific substitute part numbers are documented in the provided source material.