Single Bipolar Transistors 2STL2580-AP product image

2STL2580-AP

  • Description:TRANS NPN 400V 1A TO-92MOD
  • Series:-

SKU:8c1493ba987b Category: Brand:

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2STL2580-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN 400V 1A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2STL2580-AP

  • Description:TRANS NPN 400V 1A TO-92MOD
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 1A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 250mA, 5V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2STL2580-AP

2STL2580-AP

Single Bipolar Transistors Overview

The 2STL2580-AP is a high voltage fast-switching NPN power transistor manufactured using high voltage multi epitaxial planar technology. It features a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Key electrical ratings include a collector-emitter voltage of 400 V (VCEO) and 800 V (VCES), a continuous collector current of 1 A, and a peak collector current of 2 A. The device operates with a maximum junction temperature of 150 °C and total dissipation of 1.5 W at 25 °C. Electrical characteristics specify a DC current gain (hFE) of 60 to 100 at IC = 250 mA, and resistive load switching times of tr = 140 ns, ts = 4 µs, and tf = 90 ns under specified test conditions.

Single Bipolar Transistors Feature Summary

  • High voltage capability utilizing multi epitaxial planar technology
  • Fast switching speed enabled by cellular emitter structure
  • Wide Reverse Biased Safe Operating Area (RBSOA)
  • Designed for lighting applications and low cost switch-mode power supplies

Single Bipolar Transistors Applications

  • Lighting systems
  • Low cost switch-mode power supplies

Single Bipolar Transistors Procurement Notes

Verify the specific order code 2STL2580-AP corresponds to the TO-92MOD package in Ammopack packaging as documented in the datasheet revision history. Confirm that the component status aligns with current production data or obsolescence notices from STMicroelectronics before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN power transistor with high voltage blocking capabilities up to 800 V and fast switching performance. Ensure the thermal design accommodates the 83 °C/W junction-to-ambient thermal resistance and that the operating junction temperature remains within the 150 °C limit during peak load conditions.

Single Bipolar Transistors Part Context

The 2STL2580-AP belongs to the 2STL2580 family of high voltage fast-switching NPN power transistors produced by STMicroelectronics. This family utilizes advanced planar technology to achieve high switching speeds suitable for medium voltage applications. The -AP suffix specifically denotes the Ammopack variant of the standard TO-92MOD package configuration.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

2STL2580-AP2STL2580-AP

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