2STL2580

Single Bipolar Transistors Overview

The 2STL2580 is a high voltage fast-switching NPN power transistor manufactured using high voltage multi epitaxial planar technology. It features a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Key electrical ratings include a collector-emitter voltage of 400 V (VCEO) and 800 V (VCES), a continuous collector current of 1 A, and a peak collector current of 2 A. The device operates with a maximum junction temperature of 150 °C and total dissipation of 1.5 W at 25 °C. Electrical characteristics specify a DC current gain (hFE) of 60 to 100 at IC = 250 mA, and resistive load switching times of tr = 140 ns, ts = 4 µs, and tf = 90 ns.

Single Bipolar Transistors Feature Summary

• High voltage capability utilizing multi epitaxial planar technology
• Fast switching speed achieved through cellular emitter structure
• Wide Reverse Biased Safe Operating Area (RBSOA)
• Planar edge termination for enhanced performance

Single Bipolar Transistors Applications

• Lighting applications
• Low cost switch-mode power supplies

Single Bipolar Transistors Procurement Notes

Verify the specific order code required for your packaging needs. The standard 2STL2580 is available in TO-92MOD bags, while the 2STL2580-AP variant utilizes TO-92MOD Ammopack. Confirm environmental compliance grades such as ECOPACK specifications directly with STMicroelectronics or authorized distributors before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring medium voltage handling up to 800 V C-E breakdown alongside rapid switching capabilities. Ensure thermal management accommodates the 83 °C/W junction-to-ambient thermal resistance. Verify that base drive currents remain within the 0.5 A limit and that peak collector currents do not exceed 2 A for pulses under 5 ms to maintain safe operation within the specified RBSOA.

Single Bipolar Transistors Part Context

This device belongs to STMicroelectronics' discrete power transistor portfolio, specifically engineered for general-purpose high voltage switching tasks. It shares architectural similarities with other fast-switching NPN transistors in the series but is distinctively optimized for lighting and cost-effective SMPS topologies through its specific planar edge termination and cellular emitter design.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not provided in the official documentation.