Single Bipolar Transistors 2STR1160 product image

2STR1160

$0.43
  • Description:TRANS NPN 60V 1A SOT-23-3
  • Series:-

SKU:932f79beaee2 Category: Brand:

  
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2STR1160 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN 60V 1A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2STR1160

  • Description:TRANS NPN 60V 1A SOT-23-3
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:430mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 500mA, 2V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2STR1160

2STR1160

Single Bipolar Transistors Overview

The STMicroelectronics 2STR1160 is a low voltage fast-switching NPN power transistor manufactured using PB-HCD technology. It features a collector-emitter saturation voltage of 130 mV to 430 mV and a DC current gain ranging from 30 to 560. The device supports a maximum collector current of 1 A with a peak current of 2 A, operating within a collector-emitter voltage range up to 60 V. It utilizes an SOT-23 package for surface mounting.

Single Bipolar Transistors Feature Summary

  • Very low collector-emitter saturation voltage
  • High current gain characteristic
  • Fast switching speed

Single Bipolar Transistors Applications

  • LED drivers
  • Battery chargers
  • Motor and relay drivers
  • Voltage regulation

Single Bipolar Transistors Procurement Notes

Verify the specific revision level against the latest official datasheet before finalizing designs. Confirm that the SOT-23 tape and reel packing matches production requirements. Ensure thermal management aligns with the specified junction-to-ambient resistance values under actual PCB layout conditions.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and high current gain are critical for efficiency in low-voltage applications. Consider the complementary PNP 2STR2160 if push-pull configurations are required. Evaluate the SOT-23 package constraints regarding thermal dissipation and physical space limitations in the target circuit design.

Single Bipolar Transistors Part Context

This NPN power transistor belongs to STMicroelectronics' low voltage discrete semiconductor portfolio. It is designed for general-purpose switching and amplification tasks where compact size and high performance are necessary. The device complements other bipolar transistors in the series for balanced circuit implementations.

Single Bipolar Transistors Replacement Considerations

The complementary PNP transistor is the 2STR2160. Verify pinout compatibility and electrical characteristics against alternative suppliers' equivalents before substitution.

Single Bipolar Transistors FAQ

What technology is used to manufacture the 2STR1160?

The device is manufactured using new PB-HCD (Power Bipolar High Current Density) technology.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 60 V.

What is the typical turn-on time for resistive load switching?

The typical turn-on time (ton) is 220 ns under specified test conditions.

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