30C02S-TL-E

Single Bipolar Transistors Overview

The onsemi 30C02S-TL-E is a single NPN bipolar junction transistor designed for general-purpose and RF applications. It features a collector-emitter voltage rating of 30 V and a continuous collector current capability of 600 mA to 700 mA. The device operates with a low saturation voltage, typically 190 mV at specified currents, ensuring efficient switching performance. Packaged in a compact 3-pin SMCP surface-mount format, it offers a power dissipation rating of 200 mW. With a transition frequency of 540 MHz, the component supports high-speed signal processing tasks within constrained thermal and spatial boundaries.

Single Bipolar Transistors Feature Summary

• NPN configuration optimized for general-purpose switching and RF signal handling
• Low collector-emitter saturation voltage for improved energy efficiency
• Compact 3-pin surface-mount package suitable for space-constrained designs

Single Bipolar Transistors Applications

• General-purpose switching circuits
• RF and microwave discrete devices
• Signal processing modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL-E against official onsemi documentation to confirm packaging details and reel specifications. Ensure that the requested quantity aligns with standard manufacturing reel sizes rather than arbitrary unit counts. Cross-reference the date code and lot number with the manufacturer's traceability records to guarantee component authenticity and storage history compliance prior to integration into production lines.

Single Bipolar Transistors Selection Notes

Select this component when a small-form-factor NPN transistor is required for moderate current switching or RF applications. The 30 V voltage rating and 600 mA current limit define its operational envelope. Consider the 200 mW power dissipation constraint for thermal management planning. The SMCP package facilitates automated surface-mount assembly processes, making it suitable for high-volume consumer and industrial electronics where board real estate is limited.

Single Bipolar Transistors Part Context

This transistor belongs to onsemi’s portfolio of discrete semiconductor devices, supporting broader intelligent power and sensing technologies. It complements the company’s focus on robust reliability and scalable performance for mission-critical systems. As a standalone BJT, it serves as a fundamental building block for analog and mixed-signal circuits, often utilized alongside more complex integrated solutions within automotive, industrial, and data center infrastructure applications.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for direct substitutes. Generic equivalents may differ in saturation voltage or transition frequency. Verify pinout compatibility and thermal resistance characteristics before substitution to ensure circuit integrity and performance parity in existing designs.