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Product Detailed Parameters
- Description：RF DIODE PIN 100V 250MW
- Series：-
- Mfr：Broadcom Limited
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：100V
- Current - Max：100 mA
- Capacitance @ Vr, F：0.4pF @ 50V, 1MHz
- Resistance @ If, F：2.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max)：250 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：-
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Overview
The Broadcom Limited 5082-3080#T50 is a general-purpose RF PIN diode designed for low-power switching and attenuation applications. It features a typical effective carrier lifetime of 1300 ns, a breakdown voltage (VBR) of 100 V, and a maximum residual series resistance of 2.5 Ω at 100 mA forward current. The device exhibits a total capacitance of 0.4 pF at 50 V reverse bias. It operates within a junction temperature range of -65°C to +150°C and supports a power dissipation of 250 mW at 25°C. This component is supplied in a tape and reel format containing 5000 devices per container.
Feature Summary
- Optimized for use as an RF current-controlled resistor in variable attenuators and automatic gain control circuits.
- Features large dynamic range and low harmonic distortion suitable for precision analog phase shifters and RF limiters.
- Constructed with a glass hermetic seal and dumet leads in the Outline 15 package.
Applications
- RF duplexers
- Antenna switching matrices
- Digital phase shifters
- Time multiplex filters
- Electrically tuned filters
Procurement Notes
Verify the #T50 suffix indicates the specific tape and reel packaging configuration containing 5000 units. Confirm that the component meets the required RoHS status and lead finish specifications (95-5 tin-lead) for your assembly process. Ensure compatibility with the Outline 15 package dimensions during PCB layout.
Selection Notes
Select this part when a high carrier lifetime of approximately 1300 ns is required for low-frequency or DC control applications. Compare the 2.5 Ω series resistance against other models like the 5082-3039 if lower resistance is needed. Verify that the 100 V breakdown voltage aligns with the peak inverse voltage requirements of the target circuit.
Part Context
This component belongs to the 5082-3zzz series of general-purpose PIN diodes manufactured by Broadcom Limited. It shares electrical characteristics with the 1N5767 diode but is distinguished by its specific carrier lifetime and packaging options. The series is widely used in RF front-end modules requiring reliable switching performance.
Replacement Considerations
The 1N5767 is a confirmed substitute with identical electrical specifications. Other series members such as the 5082-3039 or 5082-3081 may serve as alternatives if different carrier lifetimes or resistance values are acceptable.
FAQ
What is the typical effective carrier lifetime for the 5082-3080?
The typical effective carrier lifetime is 1300 ns.
How does the 5082-3080 differ from the 5082-3081?
The 5082-3081 has a higher typical carrier lifetime of 2500 ns and a slightly higher residual series resistance of 3.5 Ω compared to the 5082-3080's 2.5 Ω.
What is the maximum power dissipation rating?
The maximum power dissipation is 250 mW at 25°C ambient temperature, derating linearly to zero at 150°C.
