5082-3081

RF Diode Overview

The Broadcom Limited 5082-3081 is a PIN diode designed for RF switching and attenuating applications. It features a typical effective carrier lifetime of 2500 ns, a breakdown voltage of 100 V, and a maximum residual series resistance of 3.5 Ω at 100 mA forward current. The device exhibits a total capacitance of 0.4 pF measured at 1 MHz reverse bias. Electrical specifications are provided for use as an RF current-controlled resistor in variable attenuators and phase shifters.

RF Diode Feature Summary

• Designed for low power switching applications such as RF duplexers and antenna switching matrices
• Functions as a current-controlled resistor for variable RF attenuators and automatic gain control circuits
• Utilizes a glass hermetic seal with dumet leads in the Outline 15 package

RF Diode Applications

• RF duplexers
• Antenna switching matrices
• Digital phase shifters
• Variable RF attenuators
• Automatic gain control circuits

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package marking codes match the specified digital coding format. Ensure soldering temperatures remain within the 260°C limit for five seconds to prevent damage to the glass hermetic seal. Check RoHS compliance status as lead finish specifications may vary by manufacturing date.

RF Diode Selection Notes

Select this component when a high effective carrier lifetime of 2500 ns is required for specific attenuation linearity. Compare the 3.5 Ω residual series resistance against circuit requirements. Verify that the 100 V breakdown voltage meets system peak inverse voltage needs. Consider the 0.4 pF capacitance for high-frequency signal integrity.

RF Diode Part Context

This part belongs to the 5082-3zzz series of general purpose PIN diodes manufactured by Broadcom Limited (formerly Avago Technologies). The series includes variants optimized for band switching or different carrier lifetimes. The 5082-3081 specifically targets applications requiring higher carrier lifetime compared to the 5082-3080 variant.

RF Diode Replacement Considerations

The 5082-3080 shares similar electrical characteristics but has a lower typical effective carrier lifetime of 1300 ns. The 1N5767 also offers a 1300 ns lifetime with additional leakage current specifications. Verify pin compatibility and package dimensions before substitution.