5082-3081#T25

RF Diode Overview

The Broadcom Limited 5082-3081#T25 is a general-purpose RF PIN diode designed for low-power switching and attenuation applications. It features a typical effective carrier lifetime of 2500 ns, a breakdown voltage of 100 V, and a maximum residual series resistance of 3.5 Ω at 100 mA forward current. The device exhibits a total capacitance of 0.4 pF at 50 V reverse bias. Packaged in the Outline 15 axial leaded format with a glass hermetic seal, it operates within a junction temperature range of -65°C to +150°C and dissipates up to 250 mW.

RF Diode Feature Summary

• Low harmonic distortion and large dynamic range suitable for precision RF control
• Low series resistance and capacitance characteristics for efficient signal handling
• Current-controlled resistor functionality for variable attenuation and phase shifting

RF Diode Applications

• RF duplexers and antenna switching matrices
• Digital phase shifters and time multiplex filters
• Variable RF attenuators and automatic gain control circuits
• Electrically tuned filters and analog phase shifters
• RF limiters and modulators

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package marking codes match the specific part number sequence. Ensure storage conditions maintain the integrity of the tin-lead finish and glass hermetic seal prior to assembly.

RF Diode Selection Notes

Select this component when a high carrier lifetime is required for specific attenuation linearity. Compare the 3.5 Ω series resistance against circuit impedance requirements. Verify that the 100 V breakdown voltage exceeds peak reverse voltages in the target application environment.

RF Diode Part Context

This component belongs to the 5082-3xxx series of PIN diodes manufactured by Broadcom Limited. It shares the Outline 15 mechanical package with other variants in the family but differs in electrical parameters such as carrier lifetime and series resistance to suit distinct RF control needs.

RF Diode Replacement Considerations

The 5082-3080 is a documented substitute within the same datasheet featuring similar electrical characteristics but a lower carrier lifetime of 1300 ns. Verify functional compatibility regarding switching speed and attenuation linearity before implementation.

RF Diode FAQ

What is the typical effective carrier lifetime for the 5082-3081?

The typical effective carrier lifetime is 2500 ns.

How does the series resistance vary with forward current?

The series resistance is specified as a maximum of 3.5 Ω at a forward current of 100 mA.

What is the maximum power dissipation rating?

The maximum power dissipation is 250 mW at 25°C ambient temperature.