Single Bipolar Transistors 5Q85-D45H11 product image

5Q85-D45H11

  • Description:TRANS PNP 80V 10A TO-220
  • Series:-

SKU:bb93c2ccaf7d Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

5Q85-D45H11 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 80V 10A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 5Q85-D45H11

  • Description:TRANS PNP 80V 10A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:50 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 5Q85-D45H11

5Q85-D45H11

Single Bipolar Transistors Overview

The onsemi D45H11 is a PNP power bipolar junction transistor (BJT) manufactured using low voltage multi-epitaxial planar technology. It features a maximum collector current of 10 A and a collector-emitter breakdown voltage of 80 V. The device operates in a TO-220-3 through-hole package with a power dissipation rating of 2 W. Key electrical characteristics include a transition frequency of 40 MHz, a minimum DC current gain of 40, and an operating temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Designed for general purpose linear and switching applications
  • Low collector-emitter saturation voltage
  • Fast switching speed

Single Bipolar Transistors Applications

  • General purpose linear circuits
  • Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official documentation, as it may indicate variations in packaging or compliance status. Confirm availability status, as some variants are marked as obsolete. Ensure the selected component matches the required RoHS compliance and thermal specifications for the target application environment.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a robust PNP power switch with high current handling capabilities. Consider the TO-220-3 package for adequate heat dissipation within the specified 2 W power limit. Verify that the 80 V voltage rating provides sufficient margin for the circuit's peak operating conditions.

Single Bipolar Transistors Part Context

This device belongs to the D45H series of low voltage PNP power transistors. It is functionally similar to other industry-standard parts like the MJF45H11, though pinouts and exact parameters should be verified via datasheets. The series is designed for cost-effective solutions in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

  • MJF45H11G
  • D45H11FP

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 80 V.

Is this transistor suitable for high-frequency applications?

It has a transition frequency (fT) of 40 MHz, making it suitable for moderate-speed switching but not high-frequency RF applications.

What is the recommended mounting style?

The device is designed for through-hole installation in a TO-220-3 package.

5Q85-D45H115Q85-D45H11

Click on the inquiry