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5Q85-D45H11 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 80V 10A TO-220. Review the specifications below when checking this part for your BOM.
The onsemi D45H11 is a PNP power bipolar junction transistor (BJT) manufactured using low voltage multi-epitaxial planar technology. It features a maximum collector current of 10 A and a collector-emitter breakdown voltage of 80 V. The device operates in a TO-220-3 through-hole package with a power dissipation rating of 2 W. Key electrical characteristics include a transition frequency of 40 MHz, a minimum DC current gain of 40, and an operating temperature range from -55°C to +150°C.
Verify the specific suffix against official documentation, as it may indicate variations in packaging or compliance status. Confirm availability status, as some variants are marked as obsolete. Ensure the selected component matches the required RoHS compliance and thermal specifications for the target application environment.
Select this component for designs requiring a robust PNP power switch with high current handling capabilities. Consider the TO-220-3 package for adequate heat dissipation within the specified 2 W power limit. Verify that the 80 V voltage rating provides sufficient margin for the circuit's peak operating conditions.
This device belongs to the D45H series of low voltage PNP power transistors. It is functionally similar to other industry-standard parts like the MJF45H11, though pinouts and exact parameters should be verified via datasheets. The series is designed for cost-effective solutions in consumer and industrial electronics.
The maximum collector-emitter breakdown voltage (VCEO) is 80 V.
It has a transition frequency (fT) of 40 MHz, making it suitable for moderate-speed switching but not high-frequency RF applications.
The device is designed for through-hole installation in a TO-220-3 package.
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