6706A

FET, MOSFET Arrays Overview

The Goford Semiconductor 6706A is a dual-channel N and P channel enhancement mode power MOSFET housed in an SOP-8 Dual package. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The NMOS channel supports a drain-source voltage of 30V, continuous current of 6.5A, and maximum on-resistance of 20mΩ at 10V. The PMOS channel provides -30V breakdown, -5A continuous current, and maximum on-resistance of 45mΩ at -10V. Both channels are rated for operation between -55°C and 150°C.

FET, MOSFET Arrays Feature Summary

• Advanced trench technology architecture providing low on-resistance and reduced gate charge
• Identical low-side and high-side switch configuration within a single dual package
• 100% avalanche tested for improved ruggedness and reliability

FET, MOSFET Arrays Applications

• Power switching circuits
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the component against the official Goford Semiconductor datasheet A1931-V1.0 to confirm pinout alignment and electrical ratings match the design requirements. Ensure the SOP-8 Dual package dimensions correspond to the PCB footprint specifications. Confirm RoHS compliance status if required by the manufacturing process.

FET, MOSFET Arrays Selection Notes

Select this component when a complementary N/P pair is needed for synchronous rectification or half-bridge topologies. The dual package reduces board space compared to discrete components. Verify that the thermal resistance and power dissipation limits accommodate the specific operating conditions and ambient temperature constraints of the target application.

FET, MOSFET Arrays Part Context

This device belongs to the Goford Semiconductor lineup of trench MOSFETs designed for general-purpose power management. The dual configuration integrates both N-channel and P-channel devices into one footprint, simplifying layout for applications requiring complementary switching actions without increasing the component count.

FET, MOSFET Arrays Replacement Considerations

Public documentation identifies NCE4606, NCE4606C, NCE30NP07S, NCE4606A, and NCE4606B as compatible substitutes.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the 6706A?

The NMOS channel supports a pulsed drain current of 26A, while the PMOS channel supports -20A.

Is the 6706A suitable for high-frequency switching applications?

Yes, the device features low gate charge and fast switching times, making it suitable for high-frequency applications such as DC/DC converters.

What is the threshold voltage range for the NMOS channel?

The gate-source threshold voltage (VGS(th)) for the NMOS channel ranges from 1.0V to 2.0V at a drain current of 250µA.