71V321SA25PF8

Memory IC Overview

The Renesas Electronics Corporation 71V321SA25PF8 is a dual-port static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 16 kilobits, organized as 2K words by 8 bits. The device features an asynchronous parallel interface with a maximum access time of 25 nanoseconds. It operates within a supply voltage range of 4.5 volts to 5.5 volts and supports surface-mount installation in a 52-lead Plastic Leadless Chip Carrier (PLCC) package. The component is rated for commercial operating temperatures between 0°C and 70°C.

Memory IC Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on both ports.

Memory IC Applications

• Data buffering in high-speed digital signal processing systems.

Memory IC Procurement Notes

Verify the specific suffix requirements against the official datasheet before procurement. Confirm that the 52-lead PLCC package dimensions match the target PCB footprint. Ensure the power supply design strictly adheres to the 4.5V to 5.5V operating range to prevent functional failure or damage to the silicon structure.

Memory IC Selection Notes

Select this component when a 5-volt logic interface is required for dual-port memory applications. The 25-nanosecond access speed suits moderate-speed data handling tasks. Consider the 52-lead PLCC package constraints regarding board space and thermal dissipation capabilities during the initial hardware design phase.

Memory IC Part Context

This part belongs to the 71V321S series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. The series offers various access speeds and packaging options to accommodate different system performance requirements and physical layout constraints in embedded electronic designs.

Memory IC Replacement Considerations

Consult the manufacturer's official documentation for verified cross-reference part numbers. Verify pin compatibility and electrical specifications before substituting any alternative components.