RF FETs, MOSFETs A2G22S160-01SR3 product image

A2G22S160-01SR3

$23.86
  • Description:RF MOSFET 48V NI400
  • Series:-

SKU:621be4782260 Category: Brand:

  
  • Quantity
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A2G22S160-01SR3 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET 48V NI400. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for A2G22S160-01SR3

  • Description:RF MOSFET 48V NI400
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:-
  • Frequency:2.11GHz
  • Gain:19.6dB
  • Voltage - Test:48 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:150 mA
  • Power - Output:32W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:NI-400S-2S
  • Supplier Device Package:NI-400S-2S
  • Configuration:-

RF FETs, MOSFETs datasheet and documents for A2G22S160-01SR3

A2G22S160-01SR3

RF FETs, MOSFETs Overview

The A2G22S160-01SR3 is an RF power LDMOS transistor from NXP Semiconductors, designed for cellular infrastructure applications. It operates within the 1800 MHz to 2200 MHz frequency band and delivers a typical output power of 160 W. The device is optimized for average power performance under W-CDMA test signals with a drain voltage of 28 V. It features internal input and output matching networks to facilitate integration into base station designs.

RF FETs, MOSFETs Feature Summary

  • Internal input and output matching networks simplify circuit design
  • Optimized for high efficiency in wireless communication systems
  • Designed for robust operation in cellular base station environments

RF FETs, MOSFETs Applications

  • Wireless infrastructure base stations
  • Cellular network amplifiers
  • Broadband radio transmitters

RF FETs, MOSFETs Procurement Notes

Verify the specific suffix SR3 against the official datasheet to confirm package type and reel specifications. Ensure compatibility with existing thermal management solutions and verify that the 28 V operating voltage aligns with system requirements before procurement.

RF FETs, MOSFETs Selection Notes

Select this component when designing for the 1800–2200 MHz band requiring approximately 160 W output power. Consider its internal matching capabilities if minimizing external passive components is a priority. Evaluate thermal resistance parameters relative to the intended heatsink configuration.

RF FETs, MOSFETs Part Context

This part belongs to NXP's Airfast portfolio of RF power LDMOS transistors. These devices are engineered for high linearity and efficiency in macro cell and distributed antenna systems. The product line supports various cellular standards including LTE and W-CDMA across multiple frequency bands.

RF FETs, MOSFETs Replacement Considerations

Consult the official NXP selector guide for direct replacements or pin-compatible alternatives within the same frequency band and power class. Verify electrical characteristics and packaging dimensions before substitution.

A2G22S160-01SR3A2G22S160-01SR3
$23.86
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