A2G22S190-01SR3

RF FETs, MOSFETs Overview

The A2G22S190-01SR3 is a 36 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. It operates at a drain-source voltage of 48 Vdc with a maximum rating of 125 Vdc. The device features an internally matched input and is optimized for Doherty configurations. Typical single-carrier W-CDMA performance at 2000 MHz yields 36 W average output power, 37.2% drain efficiency, and -33.2 dBc adjacent channel power ratio.

RF FETs, MOSFETs Feature Summary

• Optimized for Doherty amplifier applications
• Designed for digital predistortion error correction systems
• High terminal impedances for optimal broadband performance

RF FETs, MOSFETs Applications

• Cellular base station amplifiers
• Wide instantaneous bandwidth applications
• Digital predistortion linearization systems

RF FETs, MOSFETs Procurement Notes

Verify the complete part number including the R3 suffix for tape and reel packaging specifications. Confirm that the application frequency falls within the guaranteed 1800 to 2200 MHz band, as performance outside this range is not guaranteed. Ensure proper biasing sequences are followed to prevent device damage due to the depletion mode nature of the transistor.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring high linearity and efficiency in the 1800–2200 MHz spectrum. The internal input matching simplifies circuit design by reducing external component count. Consider thermal management requirements given the junction temperature limits and thermal resistance characteristics specified in the datasheet.

RF FETs, MOSFETs Part Context

This device belongs to NXP's Airfast series of RF power GaN transistors. It utilizes a NI-400S-2S package. The product is characterized using standard test fixtures in a 50 ohm system. Performance data is derived from typical single-carrier W-CDMA measurements under specific bias conditions.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

RF FETs, MOSFETs FAQ

What is the recommended biasing sequence for turning on the device?

Set VGS to –5 V, turn on VDS to nominal supply voltage (48 V), increase VGS until IDS current is attained, and then apply RF input power.

Is the device input matched?

Yes, the part is internally input matched for ease of use in 50 ohm systems.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is 125 Vdc.